Four photon parametric amplification
نویسندگان
چکیده
منابع مشابه
Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge
CMOS platforms operating at the telecommunications wavelength either reside within the highly dissipative two-photon regime in silicon-based optical devices, or possess small nonlinearities. Bandgap engineering of non-stoichiometric silicon nitride using state-of-the-art fabrication techniques has led to our development of USRN (ultra-silicon-rich nitride) in the form of Si7N3, that possesses a...
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